Nonvolatile Tri-State Resistive Memory Behavior of a Stable Pyrene-Fused N-Heteroacene with Ten Linearly-Annulated Rings
Nonvolatile Tri-State Resistive Memory Behavior of a Stable Pyrene-Fused N-Heteroacene with Ten Linearly-Annulated Rings
复制标题
具有十个线性环的稳定芘熔合N-杂并苯的非易失性三态电阻记忆行为
DOI：
10.1002/chem.201801146
复制
发表时间：
2018-06-04
影响因子：
4.3
通讯作者：
Zhang, Qichun
中科院分区：
文献类型：
--
作者：
Li, Yang;Zhang, Cheng;Zhang, Qichun
大的N-杂并苯的不同功能继续在其战略合成和在有机电子领域的应用方面进行开发。在这里，我们报告了一个新的大的稳定的含芘的N-杂并苯与十个线性成环的一排。值得注意的是，它表现出优异的三态电阻存储特性，这为实现超高密度数据存储带来了巨大的希望。据我们所知，这是基于大N-杂并苯（n >= 10）的有机多态存储器件的第一个演示，这为设计更多概念验证的更大的基于N-杂并苯的存储电子器件提供了指导。
The diverse functionalities of large N-heteroacenes continue to be developed in terms of their strategic synthesis and application in the organic electronic field. Here, we report a novel large stable pyrene-containing N-heteroacene with ten linearly-annulated rings in one row. Remarkably, it exhibited excellent tri-state resistive memory property, which held great promise to achieve ultrahigh-density data storage. To the best of our knowledge, it is the first demonstration of organic multistate memory device based on large N-heteroacene (n >= 10), which provides guidelines for designing more proof-of-concept larger N-heteroacene-based memory electronics.