Enhancement of light extraction in GaN-based light-emitting diodes using rough beveled ZnO nanocone arrays.
Enhancement of light extraction in GaN-based light-emitting diodes using rough beveled ZnO nanocone arrays.
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DOI：
10.1364/oe.20.001013
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发表时间：
2012-01
期刊：
影响因子：
3.8
通讯作者：
Zhengmao Yin;Xiaoyan Liu;Yongzhong Wu;Xiaopeng Hao;Xiangang Xu
中科院分区：
文献类型：
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作者：
Zhengmao Yin;Xiaoyan Liu;Yongzhong Wu;Xiaopeng Hao;Xiangang Xu
报道了在平面氧化铟锡（ITO）层上生长粗糙斜面ZnO纳米锥阵列的GaN基蓝光发光二极管（LED）的光提取效率的显著提高。与传统的平面ITO LED相比，具有粗糙斜面ZnO纳米锥阵列的LED的光输出功率在20 mA时增加了约110%。具有粗糙斜面ZnO纳米锥的GaN基LED的光提取效率比具有光滑表面的六边形ZnO纳米棒的GaN基LED的光提取效率大得多。光线追迹分析表明，与ZnO纳米棒相比，表面粗糙的ZnO纳米锥扩大了GaN基LED的光逃逸锥，在光提取方面具有更大的优势。
A remarkable enhancement of light extraction efficiency in GaN-based blue light-emitting diodes (LEDs) with rough beveled ZnO nanocone arrays grown on the planar indium tin oxide (ITO) layer is reported. The light output power of LEDs with rough beveled ZnO nanocone arrays was increased by about 110% at 20 mA compared with conventional LEDs with planar ITO. The light extraction efficiency of GaN-based LEDs with rough-beveled ZnO nanocones is measured much greater than with smooth-surface hexagonal ZnO nanorods. The light-ray tracing analysis showed that ZnO nanocones with rough surfaces enlarge the light escape cone of GaN-based LEDs and have a greater advantage for extracting light compared with ZnO nanorods.