Effect of electron-electron scattering on magnetointersubband resistance oscillations of two-dimensional electrons in GaAs quantum wells
Effect of electron-electron scattering on magnetointersubband resistance oscillations of two-dimensional electrons in GaAs quantum wells
复制标题
电子-电子散射对GaAs量子阱中二维电子磁子带间电阻振荡的影响
DOI：
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发表时间：
2009
期刊：
影响因子：
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通讯作者：
S. Vitkalov
中科院分区：
文献类型：
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作者：
A. V. Goran;A. Bykov;A. Toropov;S. Vitkalov
研究了AlAs/GaAs超晶格势垒下，占据两个子带(能量分别为E_1和E_2)的二维电子的低温($4.2<；T<；12.5$K)磁输运。两系列的Shubnikov-de Haas振荡都伴随着磁子带间振荡，在逆磁场中是周期性的。振荡周期满足条件$\Delta_{12}=(E_2-E_1)=k\cdot\hbar\omega_c$，其中$\Delta_{12}$是子带能量间隔，$\omega_c$是回旋频率，$k$是正整数。在$T$=4.2K时，振荡表现为直到$k$=100。观察到磁子带间振荡的强烈温度抑制。我们证明了这种抑制是电子-电子散射的结果。我们的结果与最近的实验很好地一致，表明对电子-电子相互作用的敏感性是磁阻振荡的基本性质，起源于二阶Dingle因子。
The low-temperature($4.2<T<12.5$ K) magnetotransport ($B<2$ T) of two-dimensional electrons occupying two subbands (with energy $E_1$ and $E_2$) is investigated in GaAs single quantum well with AlAs/GaAs superlattice barriers. Two series of Shubnikov-de Haas oscillations are found to be accompanied by magnetointersubband (MIS) oscillations, periodic in the inverse magnetic field. The period of the MIS oscillations obeys condition $\Delta_{12}=(E_2-E_1)=k \cdot \hbar \omega_c$, where $\Delta_{12}$ is the subband energy separation, $\omega_c$ is the cyclotron frequency, and $k$ is the positive integer. At $T$=4.2 K the oscillations manifest themselves up to $k$=100. Strong temperature suppression of the magnetointersubband oscillations is observed. We show that the suppression is a result of electron-electron scattering. Our results are in good agreement with recent experiments, indicating that the sensitivity to electron-electron interaction is the fundamental property of magnetoresistance oscillations, originating from the second-order Dingle factor.