Effect of Frequency on Total Ionizing Dose Response of Ring Oscillator Circuits at the 7-nm Bulk FinFET Node
Effect of Frequency on Total Ionizing Dose Response of Ring Oscillator Circuits at the 7-nm Bulk FinFET Node
复制标题
频率对 7 nm Bulk FinFET 节点环形振荡器电路总电离剂量响应的影响
DOI：
10.1109/tns.2022.3144911
复制
发表时间：
2022
影响因子：
1.8
通讯作者：
B. Bhuva
中科院分区：
文献类型：
--
作者：
A. Feeley;Y. Xiong;N. Guruswamy;B. Bhuva
总电离剂量（TID）在7纳米体FinFET节点的影响，其特征在于在动态和静态测试条件下，通过改变环形振荡器（RO）的频率，漏电流和逆变器延迟。使用ARACOR X射线机的总剂量暴露结果表明，静态条件代表最差情况条件。较高的工作频率导致辐射后的泄漏电流和逆变器延迟增加。泄漏电流的变化率与暴露期间的频率成反比。逆变器延迟的变化率与TID暴露期间的频率直接相关。总体而言，电路级参数（逻辑门延迟和工作电流）的退化小于1%的TID曝光435克拉德（二氧化硅）。
Total ionizing dose (TID) effects at the 7-nm bulk FinFET node are characterized under dynamic and static test conditions through changes in ring oscillator (RO) frequencies, leakage currents, and inverter delays. Results from total-dose exposures using the ARACOR X-ray machine showed that static conditions represented the worst case conditions. Higher operating frequencies resulted in increased leakage currents and inverter delays after irradiation. The rate of change for leakage current was inversely proportional to frequency during exposure. The rate of change for inverter delay was directly related to frequency during TID exposure. Overall, degradations in circuit-level parameters (logic gate delays and operating current) were less than 1% for TID exposures of 435 krad(SiO2).