Transport, correlation and structural defects
Transport, correlation and structural defects
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传输、关联和结构缺陷
DOI：
10.1142/0912
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发表时间：
1990
期刊：
影响因子：
--
通讯作者：
H. Fritzsche
中科院分区：
文献类型：
--
作者：
H. Fritzsche
无序材料为固体结构以及载流子移动和与环境相互作用的方式提供了新的和意想不到的见解。本评论卷的第一部分提出了新的结果和想法，在处理非晶和玻璃半导体的局部键合结构的主题。其中包括含金属原子的硫系玻璃的局部键结构，局部振动模式与局部键环境的相互作用，以及h键构型的新模型。第二部分研究了无序半导体中低温跳变输运和光载流子在高电场下随频率变化的复合问题。权威专家的评论提供了不同的见解，并试图从不同的角度解决问题。
Disordered materials offer new and unexpected insights into the structure of solids and the ways charge carriers move and interact with their environment. The first part of this review volume presents new results and ideas in the subject dealing with the local bonding structure in amorphous and vitreous semiconductors. These include the local bonding structure in chalcogenide glasses containing metal atoms, the interaction of local vibrational modes with their local bonding environment, and new models for the H-bonding configurations.The second part is devoted to questions of low temperature hopping transport and recombination of photocarriers in disordered semiconductors as a function of frequency and at high electric fields. The reviews by leading experts offer different insights and attempt to address problems from the various angles.