Multichannel and Wideband Power Amplifier Design Methodology for 4G Communication Systems Based on Hybrid Class-J Operation
Multichannel and Wideband Power Amplifier Design Methodology for 4G Communication Systems Based on Hybrid Class-J Operation
复制标题
DOI：
10.1109/tmtt.2012.2198489
复制
发表时间：
2012-06
影响因子：
4.3
通讯作者：
K. Mimis;K. Morris;S. Bensmida;J. Mcgeehan
中科院分区：
文献类型：
--
作者：
K. Mimis;K. Morris;S. Bensmida;J. Mcgeehan
提出了一种用于第四代(4G)通信发射机的多通道、宽带、高效混合J类功率放大器的设计方法。设计过程基于大量相同拓扑但不同维度的输出匹配网络的自动生成和评估，这些网络涉及效率、输出功率和线性度。该方法可应用于放大器设计中的效率/线性度/带宽权衡管理。在本文中，考虑了两种匹配的网络结构。一个多节网络和一个阶跃阻抗微带线网络。通过对采用上述方法实现的两个功率放大器的设计、仿真和测量，验证了该方法的有效性。第一个放大器覆盖1.6-2.2 GHz(31.6%的分数带宽)，在2-dB压缩点的漏极效率为55%-68%，最差情况下的邻道功率比(ACRP)和误差向量幅度(EVM)在带宽上分别为-21.8dBc和8.35%。第二种覆盖范围为0.5-1.8 GHz(113%的分数带宽)，在2分贝压缩点的漏极效率为50%-69%，最坏情况下ACRP值为-27.5dBc，EVM值为4.22%。这两个放大器都是基于商业封装的10W GaN HEMT晶体管。
A methodology for the design of multichannel, wideband, highly efficient hybrid Class-J power amplifiers for fourth-generation (4G) communication transmitters is proposed. The design procedure is based on the automatic generation and evaluation of a vast number of output matching networks of the same topology but different dimensions, with respect to efficiency, output power, and linearity. The approach can find application in the management of the efficiency/linearity/bandwidth tradeoff in amplifier design. In this paper, two matching network architectures have been considered. One multistubbed network and a stepped-impedance microstrip line network. The approach has been validated through the design, simulation, and measurement of two power amplifiers realized using the aforementioned procedure. The first amplifier covers 1.6-2.2 GHz (31.6% fractional bandwidth) with 55%-68% drain efficiency at the 2-dB compression point and worst case adjacent channel power ratio (ACRP) and error vector magnitude (EVM) of - 21.8 dBc and 8.35%, respectively, over the bandwidth. The second covers 0.5-1.8 GHz (113% fractional bandwidth) with 50%-69% drain efficiency at the 2-dB compression point and worst case ACRP of - 27.5 dBc and EVM of 4.22%. Both amplifiers are based on a commercial, packaged 10-W GaN HEMT transistor.