Fabrication and Characterization of Multiple-Gated Poly-Si Nanowire Thin-Film Transistors and Impacts of Multiple-Gate Structures on Device Fluctuations
Fabrication and Characterization of Multiple-Gated Poly-Si Nanowire Thin-Film Transistors and Impacts of Multiple-Gate Structures on Device Fluctuations
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多栅极多晶硅纳米线薄膜晶体管的制造和表征以及多栅极结构对器件波动的影响
DOI：
10.1109/ted.2008.2005161
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发表时间：
2008
影响因子：
3.1
通讯作者：
Horng
中科院分区：
文献类型：
--
作者：
H. Hsu;T. Liu;L. Chan;Chuan;Tiao;Horng
对几种具有多门控（MG）结构的多晶硅纳米线（NW）薄膜晶体管（TFTs）进行了论证和表征。这些装置是用简单的方法制造的，而不需要昂贵的光刻工具和工艺。所制备的触发器件显示出低亚阈值摆幅（SS），约为100 mV/dec，开/关电流比高于108。这些结果清楚地表明了MG方案在提高器件性能方面的有效性。此外，还演示了一种多通道方案，可以在不影响器件性能的情况下进一步增加驱动电流。最后，采用一种巧妙的方法研究了MG对NWTFT特性变化的影响，该方法允许制造具有相同NW沟道但不同栅极配置的测试结构。结果清楚地表明，增加栅极调制的NW沟道表面的比例可以减小这种变化。
Several types of poly-Si nanowire (NW) thin-film transistors (TFTs) with multiple-gated (MG) configuration were demonstrated and characterized. These devices were fabricated with simple methods without resorting to costly lithographic tools and processes. The fabricated trigated devices show a low subthreshold swing (SS) of around 100 mV/dec and on/off current ratio higher than 108. These results clearly indicate the effectiveness of MG scheme in enhancing the device performance. Furthermore, a multiple-channel scheme was demonstrated to further increase the drive current without compromising device performance. Finally, the impact of MG on the variation of NWTFT characteristics is investigated with a clever method that allows the fabrication of test structures with identical NW channel but different gate configurations. The results clearly show that the variation could be reduced by increasing the portion of NW channel surface that is modulated by the gate.