Single-Electron Transistors (SETs) with Nb/Nb Oxide System Fabricated by Atomic Force Microscope (AFM) Nano-Oxidation Process
Single-Electron Transistors (SETs) with Nb/Nb Oxide System Fabricated by Atomic Force Microscope (AFM) Nano-Oxidation Process
复制标题
采用原子力显微镜 (AFM) 纳米氧化工艺制造的具有 Nb/Nb 氧化物系统的单电子晶体管 (SET)
DOI：
10.1109/drc.1996.546429
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发表时间：
1996
影响因子：
1.5
通讯作者：
M. Konagai
中科院分区：
文献类型：
--
作者：
J. Shirakashi;K. Matsumoto;N. Miura;M. Konagai
提出了一种基于原子力显微镜（AFM）的阳极氧化技术，该技术是基于金属薄膜的阳极氧化选择性氧化，用于制备铌(Nb)/铌氧化物基超小型隧道结器件。利用该技术制备了不带栅结构的双结器件和带侧栅结构的双结器件，并在100k下观察到明显的单电子充电效应。
An atomic force microscope (AFM)-based anodic oxidation technique, which is based on selective oxidation of metal thin film by anodization, was developed for the fabrication of niobium (Nb)/Nb oxide-based ultra-small tunnel junction devices. Double junction devices without any gate structures and double junction SETs with side-gate structure were fabricated using this technique, and single-electron charging effects were clearly observed at 100 K.