The Influence of Deposition Conditions and Dopant Ions on the Structure, Activity, and Stability of Lead Dioxide Anode Coatings

The Influence of Deposition Conditions and Dopant Ions on the Structure, Activity, and Stability of Lead Dioxide Anode Coatings
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DOI:
10.1149/1.1897366
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发表时间:
2005-06
影响因子:
3.9
通讯作者:
Y. Mohd;D. Pletcher
Y. Mohd;D. Pletcher
中科院分区:
工程技术4区
文献类型:
--
作者:
Y. Mohd;D. Pletcher

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从硝酸溶液中在金表面电镀了一层β-二氧化铅,研究了铅浓度、镀液中掺杂离子、pH值、温度、电流密度和沉积时间对镀层性能的影响及其作为合成和废水处理负极材料的性能。当温度为333K,电流密度为5 mA cm(-2)时,在0.5MPbNO3(NO3)(2)/1MHNO3中沉积的膜层具有最好的粘附性、耐磨性和化学稳定性,其形貌由角晶组成,但作为阳极材料的活性较差。在许多其他条件下,沉积物是由重叠的半球中心组成的。这样的层在开路条件下明显不稳定,都在酸中缓慢溶解,并在酸性溶液中被二甲基亚砜还原。另一方面,它们支持有机分子的阳极氧化。铋(III)是一种首选的掺杂离子;即使在没有铋(III)的情况下形成角晶的条件下,它也导致了由半球中心组成的沉积的偏好。铋(III)掺杂涂层代表了稳定性和支持阳极氧化能力之间的最佳折衷。
beta-lead dioxide layers have been electroplated onto gold from nitric acid solutions and the influence of lead (II) concentration, dopant ions in the bath, pH, temperature, current density, and deposition time on the characteristics of the deposits and their properties as anode materials for synthesis and effluent treatment have been examined. The most adhesive, abrasion resistant and chemically stable deposits were prepared in 0.5 M Pb(NO3)(2)/1 M HNO3 at a temperature of 333 K and using a current density of 5 mA cm(-2); these deposits had a morphology consisting of angular crystallites but they were rather inactive as anode materials. In many other conditions, deposits were made up of overlapping hemispherical centers. Such layers were significantly less stable in open-circuit conditions and were both dissolved slowly in acids and reduced by dimethyl sulfoxide in acidic solutions. On the other hand, they supported the anodic oxidation of organic molecules. Bismuth (III) was a preferred dopant ions; it led to a preference for deposits consisting of hemispherical centers even in conditions where angular crystallites were formed in the absence of Bi (III). The Bi (III) doped coatings represent the best compromise between stability and the ability to support anodic oxidations.