GAP AT THE FERMI LEVEL IN THE INTERMETALLIC VACANCY SYSTEM TINISN, ZRNISN, HFNISN
GAP AT THE FERMI LEVEL IN THE INTERMETALLIC VACANCY SYSTEM TINISN, ZRNISN, HFNISN
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DOI：
10.1007/bf01307996
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发表时间：
1989-01-01
期刊：
影响因子：
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通讯作者：
BELOGOROKHOV, AI
中科院分区：
文献类型：
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作者：
ALIEV, FG;BRANDT, NB;BELOGOROKHOV, AI
这类新的金属间化合物RNiSn（R=Ti，Zr，Hf）的特征在于与没有Ni空位的正常金属RNi 2Sn相比，存在Ni原子空位的有序亚晶格。我们报告不寻常的传输和光学性质的RNiSn系统。RNiSn的电阻率非常高（3<p<100）mOhm*cm;电阻率温度系数（TCR）为负并且强烈依赖于退火条件。对于某些样品ZrNiSn和TiNiSn的单晶，在0.1<T<20 K的温度下，电阻率可以由Mott定律描述。由霍尔效应数据和晶格常数随温度的变化关系，推断出在T =100 K附近发生相变，而晶体结构没有发生变化。还报道了RPtSn和RPdSn（R=Ti，Zr，Hf）化合物中输运现象的初步数据。RNiSn系统的这些特殊性质可能与费米能级附近的电子能谱带隙有关。
The new class of intermetallic compounds RNiSn(R=Ti,Zr,Hf) may be characterised by the presence of an ordered sublattice of Ni atom vacancies in comparison with normal metals RNi2Sn with no Ni vacancies. We report unusual transport and optical properties of the RNiSn system. The electrical resistivity of RNiSn is very high (3<p<100) mOhm*cm; the temperature coefficient of resistivity (TCR) is negative and strongly dependent on the annealing conditions. For some samples ZrNiSn and for a single crystal of TiNiSn the resistivity can be described by the Mott's law at temperatures 0.1<T<20 K. A phase transition nearT=100 K without change of crystal structure was deduced from Hall effect data and the temperature dependence of the lattice constant. Preliminary data on transport phenomena in RPtSn and RPdSn(R=Ti,Zr,Hf) compounds are also reported. The unusual properties of RNiSn system might be related to a gap of the electron spectrum near the Fermi energy.