DIRECT SUBPICOSECOND MEASUREMENT OF CARRIER MOBILITY OF PHOTOEXCITED ELECTRONS IN GALLIUM-ARSENIDE
DIRECT SUBPICOSECOND MEASUREMENT OF CARRIER MOBILITY OF PHOTOEXCITED ELECTRONS IN GALLIUM-ARSENIDE
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DOI：
10.1103/physrevlett.58.2355
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发表时间：
1987-06-01
影响因子：
8.6
通讯作者：
CAPASSO, F
中科院分区：
文献类型：
--
作者：
NUSS, MC;AUSTON, DH;CAPASSO, F
在注入 2-eV 飞秒脉冲后，砷化镓中热电子的迁移率以亚皮秒时间分辨率进行了测量。注入后立即测量的迁移率小于500cm 2/Vs，表明电子有效转移到卫星L谷中。然后电子迁移率上升至准平衡值4200 cm 2/Vs，受到电子空穴散射的限制。根据注入的载流子密度，观察到上升时间在 1.8 到 3.2 ps 之间。
The mobility of hot electrons in gallium arsenide has been measured with subpicosecond time resolution, following injection by 2-eV femtosecond pulses. The mobility immediately after injection was measured to be less than 500 cm 2/Vs, indicating efficient electron transfer into the satellite L valleys. The electron mobility then rose to a quasiequilibrium value of 4200 cm 2/Vs, limited by electron-hole scattering. The rise time was observed to be between 1.8 and 3.2 ps depending on injected carrier density.