Revealing the intrinsic p-to-n transition mechanism on Mg3Sb2 through extra Mg
Revealing the intrinsic p-to-n transition mechanism on Mg3Sb2 through extra Mg
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通过额外的 Mg 揭示 Mg3Sb2 固有的 p-n 转变机制
DOI：
10.1063/5.0088156
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发表时间：
2022
影响因子：
4
通讯作者：
Xiaoyuan Zhou
中科院分区：
文献类型：
--
作者：
Xiong Zhang;Xiaoliang Cao;Yu Zhang;Haoshuang Gu;Jibing Liu;Guang Han;Bin Zhang;Guoyu Wang;Xiaoyuan Zhou
通过对Mg3Sb2进行额外的Mg调谐，揭示了Mg3Sb2基热电材料的内在p-to-n转变机制。通过TEM表征和输运测量，发现Mg3Sb2基体随外加Mg含量的增加可经历富Mg空位期（富sb相）、补Mg空位期（几乎无析出物）和缺Mg空位期（富Mg相）三个阶段的演化，表明Mg空位浓度是本征p向n转变的关键因素。我们的工作将加深对mg3sb2基热电体中p-to-n跃迁的理解，并为开发其他p/n共存热电体提供有价值的参考。
The intrinsic p-to-n transition mechanism for Mg3Sb2-based thermoelectrics is revealed through pristine Mg3Sb2 by tunning extra Mg. By using TEM characterization combined with transport measurements, the Mg3Sb2 matrix is proposed to have three stages of evolution with the increase in extra Mg content: Mg vacancy-rich (Sb-rich phase) period, Mg vacancy-compensated (nearly no precipitates) period, and Mg vacancy-deficient (Mg-rich phase) period, revealing that the Mg vacancy concentration is a key factor in the intrinsic p-to-n transition. Our work will deepen the understanding of p-to-n transition in Mg3Sb2-based thermoelectrics and provide valuable references for developing other p/n-coexisted thermoelectrics.