Large Rashba spin splitting of surface resonance bands on semiconductor surface
Large Rashba spin splitting of surface resonance bands on semiconductor surface
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DOI：
10.1103/physrevb.80.113309
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发表时间：
2009-09-01
影响因子：
3.7
通讯作者：
Okuyama, Hiroshi
中科院分区：
文献类型：
--
作者：
Hatta, Shinichiro;Aruga, Tetsuya;Okuyama, Hiroshi
通过角分辨光电子能谱和第一性原理电子结构计算，我们发现Bi/Ge（111）-（root 3 x root 3）R30度表面上存在由Rashba自旋轨道相互作用引起的大的自旋劈裂.来自Bi的表面共振带表现出具有1.8eV埃的大Rashba参数（α（R））的Rashba自旋分裂。自旋分裂态具有相当大的6s-6p（z）杂化特征，这导致了Bi核附近电荷密度的强烈垂直不对称性。结果表明，Bi吸附表面上的Rashba分裂的大小应主要取决于Bi的局部成键几何形状。
We have found a large spin splitting due to the Rashba spin-orbit interaction on the Bi/Ge(111)-(root 3 x root 3)R30 degrees surface by using angle-resolved photoelectron spectroscopy and first-principles electronic structure calculation. A surface resonance band derived from Bi exhibits the Rashba spin splitting with a large Rashba parameter (alpha(R)) of 1.8 eV angstrom. The spin-split states have a considerable 6s-6p(z) hybridized character, which leads to a strong perpendicular asymmetry of the charge density in close proximity of Bi nuclei. The result suggests that the magnitude of the Rashba splitting on Bi-adsorbed surfaces should depend crucially on the local-bonding geometry of Bi.