Giant Modulation of the Electron Mobility in Semiconductor Bi2O2Se via Incipient Ferroelectric Phase Transition
Giant Modulation of the Electron Mobility in Semiconductor Bi2O2Se via Incipient Ferroelectric Phase Transition
复制标题
通过初始铁电相变对半导体 Bi2O2Se 中的电子迁移率进行巨调制
DOI：
10.1021/jacs.1c12681
复制
发表时间：
2022
影响因子：
15
通讯作者：
Wenbin Li
中科院分区：
文献类型：
--
作者：
Ziye Zhu;Xiaoping Yao;Shu Zhao;Xiao Lin;Wenbin Li
高迁移率的层状半导体具有实现下一代电子和计算的潜力。本文证明了在层状半导体Bi2O2Se中观察到的超高电子迁移率源于早期的铁电跃迁，这赋予了材料强大的保护，防止库仑散射导致的迁移率退化。基于电子-声子相互作用和电离杂质散射的第一原理计算表明，在较宽的实际掺杂浓度范围内，Bi2O2Se的电子迁移率可以达到104 ~ 106cm2v - 1s - 1。此外，1.7%的小弹性应变可以驱动材料向独特的层间铁电跃迁，导致介质介电常数大幅增加，低温电子迁移率大幅提高一个数量级以上。这些结果为通过相位和介电工程实现高迁移率层状半导体开辟了一条新途径。
High-mobility layered semiconductors have the potential to enable the next-generation electronics and computing. This paper demonstrates that the ultrahigh electron mobility observed in the layered semiconductor Bi2O2Se originates from an incipient ferroelectric transition that endows the material with a robust protection against mobility degradation by Coulomb scattering. Based on first-principles calculations of electron–phonon interaction and ionized impurity scattering, it is shown that the electron mobility of Bi2O2Se can reach 104to 106cm2V–1s–1over a wide range of realistic doping concentrations. Furthermore, a small elastic strain of 1.7% can drive the material toward a unique interlayer ferroelectric transition, resulting in a large increase in the dielectric permittivity and a giant enhancement of the low-temperature electron mobility by more than an order of magnitude. These results establish a new route to realize high-mobility layered semiconductors via phase and dielectric engineering.