Secondary electron emission of sapphire and anti-multipactor coatings at high temperature
Secondary electron emission of sapphire and anti-multipactor coatings at high temperature
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DOI：
10.1016/j.apsusc.2004.05.131
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发表时间：
2004-07
影响因子：
6.7
通讯作者：
S. Michizono;Yoshio Saito;Suharyanto;Y. Yamano;S. Kobayashi
中科院分区：
文献类型：
--
作者：
S. Michizono;Yoshio Saito;Suharyanto;Y. Yamano;S. Kobayashi
电击穿（表面放电）是在真空中开发紧凑和/或高压绝缘的最严重问题之一。由于绝缘体表面的高二次电子发射（SEE）产率导致的电子倍增（多因子）是导致放电的原因之一。多因素不仅引起放电，而且引起表面过热，导致局部表面熔化。因此，高温下的SEE对于理解实际击穿过程非常重要。用扫描电子显微镜（SEM）测量了单晶氧化铝（蓝宝石）和抗多因子涂层（如具有低SEE产率的TiN和DLC薄膜）的SEE产率。
Electrical breakdown (surface discharge) is one of the most serious problems for developing compact and/or higher voltage insulation in a vacuum. Electron multiplication (multipactor) due to high secondary electron emission (SEE) yields from an insulator surface is one of the reasons for the discharge. Multipactor induces not only discharging but also excess surface heating, leading to localized surface melting. Thus, SEE at high temperature is important for understanding the actual breakdown process. The SEE yield of single crystal alumina (sapphire) and anti-multipactor coatings, such as TiN and DLC films having low SEE yields, are measured in a scanning electron microscope (SEM).