Modeling the potential of screen printed front junction CZ silicon solar cell with tunnel oxide passivated back contact
Modeling the potential of screen printed front junction CZ silicon solar cell with tunnel oxide passivated back contact
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DOI：
10.1002/pip.2809
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发表时间：
2017-01
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通讯作者：
Chia-Wei Chen;M. Hermle;J. Benick;Yuguo Tao;Y. Ok;A. Upadhyaya;Andrew M. Tam;A. Rohatgi
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文献类型：
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作者：
Chia-Wei Chen;M. Hermle;J. Benick;Yuguo Tao;Y. Ok;A. Upadhyaya;Andrew M. Tam;A. Rohatgi
n-Si吸收体顶部由薄氧化物、n + 多晶硅和金属组成的载流子选择性钝化触点可以显着降低触点下方的复合电流密度（Jorear ≤8 fA/cm2），同时提供优异的比接触电阻（5-10 mΩ-cm2）； Fraunhofer ISE 使用其隧道氧化物钝化接触 (TOPCon) 方法，在掺硼选择性发射极和 Fz 晶圆上实现了 25.1% 高效小面积电池的光刻前接触。本文展示了一种使用 Sentaurus 器件模型对此类钝化接触电池进行建模的方法，其中涉及用载流子选择性电子和空穴复合速度替换 TOPCon 区域，以匹配 TOPCon 区域的测量 Jorear 以及电池的所有光 IV 值。我们首先通过对 24.9% 参考电池进行建模来验证该方法。然后将该模型扩展到评估具有丝网印刷前触点的商业级 n 型 Cz 材料上的大面积 TOPCon 电池的效率潜力。为了使用实际的输入参数，在 Cz 晶圆上制造了 21% n 型 PERT 电池（5 Ω-cm，1.5-ms 寿命）。建模表明，如果该电池的背面替换为上述TOPCon，电池效率仅提高至21.6%，并且性能受到同质发射极的限制。然后，通过实施选择性发射极 (150/20 Ω/sq)，对效率进行建模，将其提高至 22.6%。最后，结果表明，40 µm 宽线的丝网印刷和改进的散装材料（10 Ω cm，3 ms 寿命）可以将单面 TOPCon Cz 电池效率提高至 23.2%。版权所有 © 2016 约翰·威利父子有限公司
Carrier selective passivated contacts composed of thin oxide, n + polycrystalline Si and metal on top of a n‐Si absorber can significantly lower the recombination current density (Jorear ≤8 fA/cm2) under the contact while providing excellent specific contact resistance (5–10 mΩ‐cm2); 25.1% efficient small area cells with photolithography front contacts on boron doped selective emitter and Fz wafers have been achieved by Fraunhofer ISE using their tunnel oxide passivated contact (TOPCon) approach. This paper shows a methodology to model such passivated contact cells using Sentaurus device model, which involves replacing the TOPCon region by carrier selective electron and hole recombination velocities to match the measured Jorear of the TOPCon region as well as all the light IV values of the cell. We first validated the methodology by modeling a 24.9% reference cell. The model was then extended to assess the efficiency potential of large area TOPCon cells on commercial grade n‐type Cz material with screen‐printed front contacts. To use realistic input parameters, a 21% n‐type PERT cell was fabricated on Cz wafer (5 Ω‐cm, 1.5‐ms lifetime). Modeling showed that the cell efficiency will improve to only 21.6% if the back of this cell is replaced by the above TOPCon, and the performance is limited by the homogenous emitter. Efficiency was then modeled to improve to 22.6% with the implementation of selective emitter (150/20 Ω/sq). Finally, it is shown that screen printing of 40‐µm‐wide lines and improved bulk material (10 Ω‐cm, 3‐ms lifetime) can raise the single side TOPCon Cz cell efficiency to 23.2%. Copyright © 2016 John Wiley & Sons, Ltd.