Absorption near band edges in heavily doped GaAs.
Absorption near band edges in heavily doped GaAs.
复制标题
重掺杂 GaAs 中能带边缘附近的吸收。
DOI：
--
复制
发表时间：
1985
期刊：
影响因子：
--
通讯作者：
Glyde
中科院分区：
文献类型：
--
作者：
Sritrakool;Sa;Glyde
评估重掺杂 nand p 型 GaAs 中的光吸收系数 o.(m)，以与 Casey 等人的观测值进行比较。目的是测试由 Sa-yakanit 推导出的重度无序系统中的电子理论以及从该理论得出的吸收矩阵元 (ME)。当前 a(m) 的计算从电子态密度 (DOS) 和电子波函数开始。然后导出ME。载流子电子相互作用的筛选取决于 DOS。由于为 a(m) 提供基本输入的 DOS、ME、筛选和费米能量是相互依赖的，因此必须迭代评估它们直至一致。最终的u(co)与实验非常吻合。尽管使用的 a(co) 输入非常不同，但总体 a(~) 也与 Casey 和 Stern 计算的结果类似。人们发现 o.(co) 对 DOS、ME 和带隙收缩非常敏感。与实验的比较表明，目前的 DOS 和 ME 组合模型很好地代表了重掺杂 GaAs，但带隙收缩计算需要进一步完善。
The optical-absorption coefficient o.(m) in heavily doped nand p-type GaAs is evaluated for comparison with the observed values of Casey et al. The purpose is to test the theory of electrons in heavily disordered systems derived by Sa-yakanit and the absorption matrix element (ME) which follows from this theory. The present calculation of a(m) begins with the density of electron states (DOS) and the electron wave functions. The ME is then derived. The screening of the interactions by the carrier electrons depends on the DOS. Since the DOS, ME, screening, and the Fermi energy, which provide the essential input for a(m), are interdependent they must be evaluated iteratively until consistent. The final u(co) agrees quite well with experiment. The overall a(~) is also similar to that calculated by Casey and Stern although very different inputs for a(co) are used. The o.(co) is found to be very sensitive to the DOS, the ME, and the band-gap shrinkage. The comparison with experiment suggests the present combined model of the DOS and the ME represent heavily doped GaAs well but that the band-gap-shrinkage calculations need further refinement.