Optimum Light Intensity Distribution for Growing Large Si Grains by Phase-Modulated Excimer-Laser Annealing
Optimum Light Intensity Distribution for Growing Large Si Grains by Phase-Modulated Excimer-Laser Annealing
复制标题
通过相位调制准分子激光退火生长大硅晶粒的最佳光强度分布
DOI：
10.1143/jjap.43.739
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发表时间：
2004
影响因子：
1.5
通讯作者：
M. Matsumura
中科院分区：
文献类型：
--
作者：
M. Jyumonji;Y. Kimura;Y. Taniguchi;Masato Hiramatsu;H. Ogawa;M. Matsumura
研究了KrF准分子激光和KrF准分子激光对硅薄膜的结晶特性。结果应用于设计一种生长致密大颗粒的光学系统。高分辨率光束剖面仪证实，样品表面的激光光强分布接近理想的三角形，最大最小强度比约为2。这种分布可以在单次激光脉冲的作用下生长出5 μ m长的颗粒，填充效率接近100%。
Characteristics have been investigated for both KrF excimer-laser light and KrF excimer-laser crystallization of Si thin films. The results were applied to design an optical system for growing densely packed and large grains. A high-resolution beam profiler confirmed that the laser light intensity distribution on the sample surface had a nearly ideal triangular form with a maximum-to-minimum intensity ratio of approximately 2, as designed. This distribution could grow 5-µm-long grains with a packing efficiency close to 100% by a single laser light pulse.