A hybrid approach for obtaining orientation-controlled single-crystal Si regions on glass substrates
A hybrid approach for obtaining orientation-controlled single-crystal Si regions on glass substrates
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在玻璃基板上获得取向控制的单晶硅区域的混合方法
DOI：
10.1117/12.651139
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发表时间：
2006
期刊：
影响因子：
--
通讯作者：
J. Im
中科院分区：
文献类型：
--
作者：
P. C. van der Wilt;B. Turk;A. Limanov;A. Chitu;J. Im
我们以前已经表明，位置控制的单晶区域可以通过实施称为点SLS的顺序横向凝固过程的版本来获得。然而，在非晶Si前体上进行的工艺导致具有明显随机的表面晶体取向分布的区域，这可能对所得器件的均匀性产生负面影响。在本文中，我们展示了一种方法来控制点SLS处理区域的表面取向。我们以简单的方式通过在纹理化的多晶Si前体膜上执行该过程来实现这一点，所述纹理化的多晶Si前体膜又是使用激光处理沉积的非晶Si膜获得的。这种混合方法是可能的和有效的，因为点SLS工艺允许保留“籽晶”晶体的原始纹理，同时成功地去除横向固化区域内的所有随机高角度晶界。我们确定并利用两个特定的和众所周知的激光加工技术获得高度（100）或（111）表面织构多晶硅薄膜。在（100）织构化膜上进行的点SLS实验的结果-使用连续波激光通过“混合相”区熔再结晶获得-被发现是特别重要的，因为从{100}表面取向的籽晶的生长导致主要不含任何平面缺陷的单晶区域。
We have previously shown that location-controlled single-crystal regions can be obtained by implementing a version of the sequential lateral solidification process referred to as dot-SLS. Performed on an amorphous Si precursor, however, the process results in regions having an apparently random surface crystal-orientation distribution that may negatively impact the uniformity of resulting devices. In this paper, we demonstrate one approach to control the surface orientation of dot-SLS processed regions. We accomplish this in a simple manner by performing the process on textured polycrystalline Si precursor films that were, in turn, obtained using laser processing of as-deposited amorphous Si films. This hybrid approach is possible and effective because the dot-SLS process allows for preserving the original texture of the "seed" crystals, while successfully removing all random high-angle grain boundaries within the laterally solidified regions. We identify and utilize two specific and well-known laser-processing techniques for obtaining highly (100) or (111) surface textured polycrystalline Si films. The results from dot-SLS experiments performed on (100) textured films- obtained through "mixed-phase" zone-melting recrystallization using a continuous-wave laser - were found to be particularly significant as the growth from {100} surface-oriented seeds resulted in single-crystal regions that were predominantly free of any planar defects.