InAs quantum well Hall devices for room-temperature detection of single magnetic biomolecular labels
InAs quantum well Hall devices for room-temperature detection of single magnetic biomolecular labels
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DOI:
10.1063/1.2767385
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发表时间:
2007-08-01
影响因子:
3.2
通讯作者:
Sullivan, Gerard J.
中科院分区:
文献类型:
--
作者:
Mihajlovic, Goran;Xiong, Peng;Sullivan, Gerard J.
Hall sensors with cross width of similar to 1 mu m were fabricated from InAs/AlSb quantum well semiconductor heterostructures containing two-dimensional electron gas. The room-temperature device characteristics were examined by Hall effect and electronic noise measurements along with analytical calculations. In the low-frequency range, from 20 Hz to 1.6 kHz, the noise-equivalent magnetic field resolution was found to be limited by I If and generation-recombination noise from 22 to 3.5 mu T / root Hz. The corresponding noise-equivalent magnetic moment resolution reached 10(6)mu(B)/ root Hz at similar to 700 Hz and was even lower at higher frequencies. Using a phase-sensitive measurement technique, detection of a single 1.2 mu m diameter bead, suitable for biological applications, was achieved with a signal to noise ratio of similar to 33.3 dB, as well as detection of six 250 nm beads with a signal to noise of similar to 2.3 dB per bead. The work demonstrates the efficacy of InAs quantum well Hall devices for application in high sensitivity detection of single magnetic biomolecular labels. (c) 2007 American Institute of Physics.