Correlated electrons in the presence of disorder
Correlated electrons in the presence of disorder
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无序存在时的相关电子
DOI:
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发表时间:
2009
期刊:
影响因子:
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通讯作者:
D. Vollhardt
中科院分区:
文献类型:
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作者:
K. Byczuk;W. Hofstetter;U. Yu;D. Vollhardt
Abstract.
Several new aspects of the subtle interplay between electronic correlations and disorder are reviewed. First, the dynamical mean-field theory (DMFT) together with the geometrically averaged (“typical”) local density of states is employed to compute the ground state phase diagram of the Anderson-Hubbard model at half-filling. This non-perturbative approach is sensitive to Anderson localization on the one-particle level and hence can detect correlated metallic, Mott insulating and Anderson insulating phases and can also describe the competition between Anderson localization and antiferromagnetism. Second, we investigate the effect of binary alloy disorder on ferromagnetism in materials with f-electrons described by the periodic Anderson model. A drastic enhancement of the Curie temperature Tc caused by an increase of the local f-moments in the presence of disordered conduction electrons is discovered and explained.