Lifetime measurements on collector optics from Xe and Sn extreme ultraviolet sources
Lifetime measurements on collector optics from Xe and Sn extreme ultraviolet sources
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DOI：
10.1063/1.2756525
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发表时间：
2007-07
影响因子：
3.2
通讯作者：
S. Srivastava;K. Thompson;E. Antonsen;H. Qiu;J. B. Spencer;D. Papke;D. Ruzic
中科院分区：
文献类型：
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作者：
S. Srivastava;K. Thompson;E. Antonsen;H. Qiu;J. B. Spencer;D. Papke;D. Ruzic
制造更小更快芯片的下一代光刻技术将使用发射波长为13.5nm的极紫外（EUV）光源。该技术发展中的一个具有挑战性的问题是收集器光学器件的寿命。镜面会受到离子、中性粒子和其他辐射形式的等离子体碎片流的影响，这些碎片流会损坏镜面并降低反射率。这份手稿提出了测量碎片离子通量和能量的绝对单位，从铯和锡EUV源使用球形扇区离子能量分析仪。实验测得的侵蚀对暴露的样品是在良好的协议与预测的侵蚀。这一结果允许在实验中使用测量的离子通量预测侵蚀。收集器的光学寿命，然后计算没有碎片缓解的铯和锡源。寿命预测为6h的EUV源和34h的Sn EUV源。这一结果允许计算预期的收集器光学寿命，这可能是一个重要的…
Next generation lithography to fabricate smaller and faster chips will use extreme ultraviolet (EUV) light sources with emission at 13.5nm. A challenging problem in the development of this technology is the lifetime of collector optics. Mirror surfaces are subjected to harsh debris fluxes of plasma in the form of ions, neutrals, and other radiation, which can damage the surface and degrade reflectivity. This manuscript presents the measurement of debris ion fluxes and energies in absolute units from Xe and Sn EUV sources using a spherical sector ion energy analyzer. Experimentally measured erosion on Xe exposed samples is in good agreement with predicted erosion. This result allows prediction of erosion using measured ion fluxes in experiment. Collector optic lifetime is then calculated for Xe and Sn sources without debris mitigation. Lifetime is predicted as 6h for Xe EUV sources and 34h for Sn EUV sources. This result allows calculation of expected collector optic lifetimes, which can be an important to...