Photovoltage on silicon surfaces measured by scanning tunneling microscopy
Photovoltage on silicon surfaces measured by scanning tunneling microscopy
复制标题
通过扫描隧道显微镜测量硅表面的光电压
DOI：
10.1116/1.585565
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发表时间：
1991
影响因子：
1.4
通讯作者：
G. Kochanski
中科院分区：
文献类型：
--
作者：
Y. Kuk;R. Becker;P. Silverman;G. Kochanski
在激光辐射照射的扫描隧道显微镜 (STM) 结上感应的表面偏置电压在硅表面上进行空间解析。观察到 Si(111)-(7×7) 的表面光电压为 ∼0.3 V，Si(001)-(2×1) 的表面光电压 <0.1 V，与中能隙态相关的表面/次表面缺陷附近大幅减少。这些减少归因于复合率的变化，其典型的表面屏蔽长度小于在本体中发现的长度。还观察到 3-5 mV 的微小原子变化信号，这是由于整流效率的空间变化而不是光电压造成的。
Surface bias voltages induced on a scanning tunnel microscope (STM) junction illuminated with laser radiation are spatially resolved for silicon surfaces. Surface photovoltages of ∼0.3 V for Si(111)‐(7×7) and <0.1 V for Si(001)‐(2×1) are observed with large reductions in the vicinity of surface/subsurface defects associated with midgap states. These reductions, attributed to a variation in the recombination rate, have typical surface screening lengths that are less than those found in the bulk. A small, atomically varying signal of 3–5 mV is also observed and is due to spatial variations in rectification efficiency rather than photovoltage.