Temperature-dependent behavior of Ni/4H-nSiC Schottky contacts
Temperature-dependent behavior of Ni/4H-nSiC Schottky contacts
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DOI：
10.1063/1.2769284
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发表时间：
2007-08
影响因子：
3.2
通讯作者：
M. Aydin;N. Yıldırım;A. Turut
中科院分区：
文献类型：
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作者：
M. Aydin;N. Yıldırım;A. Turut
在 180-300 K 的温度范围内测量了 Ni/4H-nSiC 肖特基二极管的电流-电压 (I-V) 特性，温度步长为 20 K。在 300 K 温度下，Ni/4H-nSiC 肖特基二极管的实验势垒高度 (BH) Φap 值约为 1.32 eV。实验 BH Φap 减小，理想因子 n 增加。 由于金属-半导体界面处的 BH 不均匀性，势垒高度呈高斯分布，基于热电子发射机制解释了随温度降低的现象。 Φb 和 A* 分别为 1.71 eV 和 156.3 A/cm2 K2，是使用 Ni/4H-nSiC 接触的温度相关实验 I-V 特性根据修改后的 ln(I0/T2)−q2σs2/2k2T2 与 1/T 图计算得出的。理查森常数值为 156.3 A/cm2 K2，与 4H-nSiC 已知的 146 A/cm2 K2 非常一致。
The current-voltage (I-V) characteristics of Ni/4H-nSiC Schottky diodes have been measured in the temperature range of 180–300 K with a temperature step of 20 K. An experimental barrier height (BH) Φap value of about 1.32 eV was obtained for the Ni/4H-nSiC Schottky diode at the 300 K. A decrease in the experimental BH Φap and an increase in the ideality factor n with a decrease in temperature have been explained on the basis of a thermionic emission mechanism with Gaussian distribution of the barrier heights due to the BH inhomogeneities at the metal-semiconductor interface. Φ¯b and A* as 1.71 eV, and 156.3 A/cm2 K2, respectively, have been calculated from a modified ln(I0/T2)−q2σs2/2k2T2 vs 1/T plot using the temperature-dependent experimental I-V characteristics of the Ni/4H-nSiC contact. The Richardson constant value of 156.3 A/cm2 K2 is in close agreement with 146 A/cm2 K2 known for 4H-nSiC.