Oxidation and Morphology Change of Ru Films Caused by Sputter Deposition of Ta2O5 Films
Oxidation and Morphology Change of Ru Films Caused by Sputter Deposition of Ta2O5 Films
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DOI：
10.1143/jjap.44.1941
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发表时间：
2005-04
影响因子：
1.5
通讯作者：
Y. Abe;M. Kawamura;K. Sasaki
中科院分区：
文献类型：
--
作者：
Y. Abe;M. Kawamura;K. Sasaki
在Ru膜上溅射沉积Ta 2 O 5膜，制备Ta 2 O 5/Ru双层膜电容器模型。研究了Ta_2 O_5沉积温度对Ru膜氧化和双层膜表面形貌的影响。随着Ta 2 O 5薄膜沉积温度的升高，双层膜的表面粗糙度增大。1)Ta_2 O_5薄膜的晶化、Ru薄膜晶粒的长大和Ru氧化生成RuO_2是表面粗糙化的原因。
Ta2O5 films were sputter deposited on Ru films and Ta2O5/Ru double layers were prepared as a model capacitor. The effects of Ta2O5 deposition temperature on oxidation of the Ru films and surface morphology of the double layers were examined. The surface roughness of the double layers increased with increasing deposition temperature of the Ta2O5 films. 1) Crystallization of Ta2O5 films, 2) crystal grain growth of Ru films, and 3) formation of RuO2 due to the oxidation of Ru were found to be the reasons for surface roughening.