In situ Evidence of Defect Cluster Absorption by Grain Boundaries in Kr Ion Irradiated Nanocrystalline Ni
In situ Evidence of Defect Cluster Absorption by Grain Boundaries in Kr Ion Irradiated Nanocrystalline Ni
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DOI：
10.1007/s11661-013-1635-9
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发表时间：
2013-02
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影响因子：
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通讯作者：
Chengshuai Sun;M. Song;K. Yu;Youxing Chen;M. Kirk;Meimei Li;Haiyan Wang;Xinghang Zhang
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文献类型：
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作者：
Chengshuai Sun;M. Song;K. Yu;Youxing Chen;M. Kirk;Meimei Li;Haiyan Wang;Xinghang Zhang
在重离子辐照的金属中，通常会出现以缺陷簇形式出现的显著的微观结构损伤。大角度晶界（GBs）长期以来被假定为缺陷团的汇，如位错环。在这里，我们提供了直接的证据，通过在原位氪离子辐照的透射电子显微镜，高角度GB的纳米晶（NC）镍，平均晶粒尺寸为~55 nm，可以有效地吸收辐射诱导的位错环和段。这些高角度的GB显着降低的密度和尺寸的辐射诱导的缺陷团簇在NC Ni相比，其散装对应物，因此NC Ni实现了显着增强的耐辐照性。
Significant microstructural damage, in the form of defect clusters, typically occurs in metals subjected to heavy ion irradiation. High angle grain boundaries (GBs) have long been postulated as sinks for defect clusters, like dislocation loops. Here, we provide direct evidence,via in situKr ion irradiation within a transmission electron microscope, that high angle GBs in nanocrystalline (NC) Ni, with an average grain size of ~55 nm, can effectively absorb irradiation-induced dislocation loops and segments. These high angle GBs significantly reduce the density and size of irradiation-induced defect clusters in NC Ni compared to their bulk counterparts, and thus NC Ni achieves significant enhancement of irradiation tolerance.