Low temperature performance of a commercially available InGaAs image sensor
Low temperature performance of a commercially available InGaAs image sensor
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商用 InGaAs 图像传感器的低温性能
DOI：
10.1117/12.2231169
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发表时间：
2016
期刊：
影响因子：
--
通讯作者：
Michitoshi Yoshida
中科院分区：
文献类型：
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作者：
Hidehiko Nakaya;Yutaka Komiyama;Nobunari Kashikawa;Tomohisa Uchida;Takahiro Nagayama;Michitoshi Yoshida
我们报告了 Hamamatsu Photonics K. K. 制造的市售 InGaAs 图像传感器的评估结果，该传感器在室温下的灵敏度在 0.95μm 至 1.7μm 之间。传感器格式为128×128像素，间距20μm。它使用我们原来的读出电子设备进行了测试，并通过机械冷却器冷却至 80 K，以最大限度地减少暗电流。尽管读出噪声和暗电流分别为 200 e-和 20 e-/秒/像素，但我们没有发现线性度、波长响应和像素内响应存在严重问题。
We report the evaluation results of a commercially available InGaAs image sensor manufactured by Hamamatsu Photonics K. K., which has sensitivity between 0.95μm and 1.7μm at a room temperature. The sensor format was 128×128 pixels with 20 μm pitch. It was tested with our original readout electronics and cooled down to 80 K by a mechanical cooler to minimize the dark current. Although the readout noise and dark current were 200 e-and 20 e-/sec/pixel, respectively, we found no serious problems for the linearity, wavelength response, and intra-pixel response.