Quantum wells with atomically smooth interfaces
Quantum wells with atomically smooth interfaces
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DOI：
10.1063/1.1490144
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发表时间：
2002-05
影响因子：
4
通讯作者：
M. Yoshita;H. Akiyama;L. Pfeiffer;K. West
中科院分区：
文献类型：
--
作者：
M. Yoshita;H. Akiyama;L. Pfeiffer;K. West
采用分子束外延解理边过生长方法和(110)生长中断退火法，制备了一层厚度正好为30个单层的GaAs量子阱，界面原子光滑，无原子粗糙度。这一量子井的微光致发光成像确实显示出在几十微米范围内的空间均匀和光谱尖锐的发射。通过在我们的量子阱中增加一个分数级的砷化镓单层，我们能够研究导致平坦界面形成的原子阶跃边缘动力学的细节。
By a cleaved-edge overgrowth method with molecular beam epitaxy and a (110) growth-interrupt anneal, we have fabricated a GaAs quantum well exactly 30 monolayers thick bounded by atomically smooth AlGaAs heterointerfaces without atomic roughness. Microphotoluminescence imaging of this quantum well indeed shows spatially uniform and spectrally sharp emission over areas of several tens of microns in extent. By adding a fractional GaAs monolayer to our quantum well we are able to study the details of the atomic step-edge kinetics responsible for flat interface formation.