Passivation of Silicon Surfaces by Oxygen Radical followed by High Pressure H2O Vapor

Passivation of Silicon Surfaces by Oxygen Radical followed by High Pressure H2O Vapor
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通过氧自由基和高压水蒸气对硅表面进行钝化

DOI:
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发表时间:
2014
期刊:
影响因子:
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通讯作者:
and Masahiko Hasumi
and Masahiko Hasumi
中科院分区:
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文献类型:
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作者:
Toshiyuki Sameshima;Shinya Yoshidomi;Tomohiko Nakamura;Satoshi Shigeno;and Masahiko Hasumi

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