Study of TID radiation effects on the breakdown voltage of buried P-pillar SOI LDMOSFETs with P-top region
Study of TID radiation effects on the breakdown voltage of buried P-pillar SOI LDMOSFETs with P-top region
复制标题
TID辐射对P顶区埋入式P柱SOI LDMOSFET击穿电压的影响研究
DOI：
10.1016/j.microrel.2022.114850
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发表时间：
2022
影响因子：
1.6
通讯作者：
Hai-fan Hu
中科院分区：
文献类型：
--
作者：
Cheng-Hao Yu;Meng-tian Bao;Hao-min Guo;Hai-fan Hu
本文对具有P顶区(TP)的绝缘体上硅(SOI)埋P柱(BP)横向双扩散金属氧化物半导体(LDMOS)的总电离剂量(TID)辐照引起的击穿电压漂移行为进行了数值研究。通过对200V额定电压的SOI BP-LDMOS器件的实验，验证了所采用的仿真模型和结构参数。讨论了漂移区不同掺杂浓度下SOI BPTP-LDMOS的击穿电压(BV)分析。由于STI层下面的P-top区可以有效地提高横向击穿电压，因此与SOI BP-LDMOS相比，SOI BPTP-LDMOS在额定电压为200V时具有更宽的N-d窗口。最后，对TID辐射对BV漂移的影响进行了数值研究。采用电场调制的TID硬化设计，与硬化SOI BP-LDMOS相比，硬化BPTP-LDMOS的TID容差从575 kRad(Si)显著提高到775 kRad(Si)。
This article presents the numerical investigation on the total ionizing dose (TID) radiation induced breakdown voltage shifting behavior of the silicon-on-insulator (SOI) buried P-pillar (BP) lateral double-diffused metal-oxide semiconductor (LDMOS) with a P-top region (TP). We validate the employed simulation models and structure parameters by the experiments of the 200 V rated SOI BP-LDMOS devices. We also discuss the breakdown voltage (BV) analysis of the SOI BPTP-LDMOS under different doping concentrations in the drift region. Because the lateral breakdown voltage can be effectively enhanced by the P-top region under STI layer, the SOI BPTP-LDMOS behaves a wider N-d window for rated 200 V compared with the SOI BP-LDMOS. Finally, we perform the numerical investigation of the TID radiation effect on the BV shift. Using the TID hardening design with the electric field modulation method, the hardened BPTP-LDMOS can achieve a significant improvement in the TID tolerance compared with the hardened SOI BP-LDMOS, from 575 to 775 krad(Si).