Cubic GaN on Nanopatterned 3C-SiC/Si (001) Substrates
Cubic GaN on Nanopatterned 3C-SiC/Si (001) Substrates
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纳米图案 3C-SiC/Si (001) 衬底上的立方 GaN
DOI：
10.1007/978-1-4614-8169-0_15
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发表时间：
2013
影响因子：
4
通讯作者：
J. Lindner
中科院分区：
文献类型：
--
作者：
R. M. Kemper;D. As;J. Lindner
在本章中，我们展示了非极性弛豫立方GaN的等离子体辅助分子束外延预图案化的3C-SiC/Si（001）衬底上的生长和表征。3C-SiC/Si（001）的纳米图案化是通过两种不同的制造技术实现的：纳米球光刻（NSL）产生大面积图案，和传统的电子束光刻（EBL）定制特定的表面形貌。这两种方法之后的剥离和反应离子蚀刻（RIE）过程。我们分析了衬底对GaN生长的影响，并表明在3C-SiC纳米结构上生长单相和缺陷减少的立方GaN晶体是可能的。此外，在3C-SiC纳米结构上生长了立方GaN/AlN多量子威尔斯，这是向纳米级器件应用的进一步发展。
In this chapter we demonstrate the growth and characterization of nonpolar relaxed cubic GaN by plasma-assisted molecular beam epitaxy on prepatterned 3C-SiC/Si (001) substrates. Nanopatterning of 3C-SiC/Si (001) was achieved by two different fabrication techniques: nanosphere lithography (NSL) to generate large-area pattern, and conventional electron beam lithography (EBL) for tailoring particular surface morphologies. Both methods were followed by a lift-off and a reactive ion etching (RIE) process. We analyze the influence of the substrate on the GaN growth and show that it is possible to grow single phase and defect-reduced cubic GaN crystals on 3C-SiC nanostructures. Furthermore cubic GaN/AlN multiquantum wells were grown on 3C-SiC nanostructures, which is a further step toward nanoscaled device applications.