p-GaN Gate Enhancement-Mode HEMT Through a High Tolerance Self-Terminated Etching Process
p-GaN Gate Enhancement-Mode HEMT Through a High Tolerance Self-Terminated Etching Process
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DOI：
10.1109/jeds.2017.2725320
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发表时间：
2017-09-01
影响因子：
2.3
通讯作者：
Yang, Hui
中科院分区：
文献类型：
--
作者：
Zhou, Yu;Zhong, Yaozong;Yang, Hui
采用基于化学易Cl2/N2/O2的电感耦合等离子体刻蚀技术制作了p-GaN栅高电子迁移率增强型晶体管。这种刻蚀技术的特点是在AlGaN势垒表面实现了精确的刻蚀自终止，从而实现了宽工艺窗口和较大的刻蚀时间容忍度。采用后退火工艺，可以使刻蚀后的二维电子气(2DEG)的性质恢复到较高水平。阐明了刻蚀自终止和2DEG恢复的机理。该器件的漏极饱和电流为355 mA/mm，阈值电压为+1.1V，导通/关断比为107，静态导通电阻R-ON为10 Omea.mm。此外，可以在整个晶片上实现器件的常断操作。
An enhancement-mode high-electron-mobility transistor with a p-GaN gate was fabricated by using a chemistry-ease Cl-2/N-2/O-2-based inductively coupled plasma etching technique. This etching technique features a precise etching self-termination at the AlGaN barrier surface, which enables a broad process window with a large tolerance of etching time. With a post-annealing process, the property of two-dimensional electron gas (2DEG) can be restored to a high level after the etching. The mechanisms of etching self- termination and 2DEG recovery were clarified. The fabricated device exhibits a drain saturation current of 355 mA/mm with a threshold voltage of +1.1 V, an on/off ratio of 107, and a static on- resistance R-ON of 10 Omega.mm. Furthermore, normally-off operation of the device can be achieved across the wafer.