Low-Temperature Formation of Silicon Nitride Film by Direct Nitridation Employing High-Density and Low-Energy Ion Bombardment
Low-Temperature Formation of Silicon Nitride Film by Direct Nitridation Employing High-Density and Low-Energy Ion Bombardment
复制标题
高密度低能离子轰击直接氮化低温形成氮化硅薄膜
DOI：
10.1143/jjap.38.2329
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发表时间：
1999
影响因子：
1.5
通讯作者：
T. Ohmi
中科院分区：
文献类型：
--
作者：
Yuji Saito;K. Sekine;M. Hirayama;T. Ohmi
使用新开发的高密度（>1012 cm-3）等离子体，其特征在于低于7 eV的低离子轰击能量，可以在400°C的温度下获得高完整性的氮化硅膜。首次发现，通过精确控制氮分压，在等离子体中产生N2+，可以在400 ℃的温度下形成化学计量的氮化硅。这种氮化硅的生长速率和电学性质与热生长氮化物的生长速率和电学性质相似。此外，在Ar/N2等离子体中加入氢气后，氮化硅膜中电荷陷阱引起的C-V曲线滞后现象消失，经Ar/N2等离子体氮化后再进行Ar/N2/H2等离子体辐照，氮化硅膜的漏电流显著降低。这些技术对于制造特征金属衬底绝缘体上硅（SOI）器件和氮化硅栅金属绝缘体半导体场效应晶体管（MISFET）是非常有前途的。
High-integrity silicon nitride films can be obtained at a temperature of 400°C using a newly developed high-density (>1012 cm-3) plasma characterized by low ion bombardment energies of below 7 eV. It was found for the first time that stoichiometric silicon nitride can be formed at a temperature of 400°C by precise control of nitrogen partial pressure to generate N2+ in plasma. The growth rate and the electrical properties of this silicon nitride are similar to those of thermally grown nitride. Moreover, hysteresis of the C–V curve attributed to charge traps in the silicon nitride film disappeared with the addition of hydrogen to Ar/N2 plasma, and the leakage current of the nitride film was decreased dramatically by irradiating in Ar/N2/H2 plasma after Ar/N2 plasma nitridation. These technologies are very promising for fabricating feature metal substrate silicon-on-insulator (SOI) devices and silicon nitride gate metal-insulator-semiconductor field effect transistors (MISFETs).