Solid‐State Infrared‐Wavelength Converter Employing High‐Quantum‐Efficiency Ge‐GaAs Heterojunction
Solid‐State Infrared‐Wavelength Converter Employing High‐Quantum‐Efficiency Ge‐GaAs Heterojunction
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DOI：
10.1063/1.1709748
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发表时间：
1967-03
影响因子：
3.2
通讯作者：
P. Kruse;F. C. Pribble;R. G. Schulze
中科院分区：
文献类型：
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作者：
P. Kruse;F. C. Pribble;R. G. Schulze
n-p-n 异质结结构是通过在 p-GaAs 衬底上外延生长 n-Ge 形成的，在相反的面上具有扩散的 n-GaAs 区域，该结构已被用来将入射到 n-Ge 面上的 1.5-μ 辐射转换为从 n-GaAs 面发射的 0.9-μ 辐射。 n-Ge、p-GaAs异质结的内量子效率为0.62；异质结的光谱响应是典型的Ge光子效应。内部波长转换效率为 2.8×10−5，主要受到低注入电流密度下 GaAs p-n 结的低电致发光量子效率的限制。
An n‐p‐n heterojunction structure, formed by the epitaxial growth of n‐Ge on a p‐GaAs substrate having a diffused n‐GaAs region on the opposite face, has been employed to convert 1.5‐μ radiation incident on the n‐Ge face to 0.9‐μ radiation emitted from the n‐GaAs face. The internal quantum efficiency of the n‐Ge, p‐GaAs heterojunction is 0.62; the spectral response of the heterojunction is typical of photon effects in Ge. The internal wavelength conversion efficiency is 2.8×10−5, limited principally by the low electroluminescent quantum efficiency of the GaAs p‐n junction at low injection current densities.