Extreme ultraviolet plasmonics and Cherenkov radiation in silicon
Extreme ultraviolet plasmonics and Cherenkov radiation in silicon
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DOI：
10.1364/optica.5.001590
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发表时间：
2018-12-20
期刊：
影响因子：
10.4
通讯作者：
Jacob, Zubin
中科院分区：
文献类型：
--
作者：
Shekhar, Prashant;Pendharker, Sarang;Jacob, Zubin
硅被广泛用作纳米电子学、微机电系统、太阳能电池和片上光子学中半导体和绝缘体应用的首选材料。与此形成鲜明对比的是，在本文中，我们探索硅的金属特性，并表明它可以支持传播表面等离子体，集体电荷振荡，在极紫外线（EUV）的能量制度不可能与其他等离子体材料，如铝，银，或金。这与传统方法有根本的不同，在传统方法中，掺杂半导体被认为是观察等离子体行为所必需的。利用动量分辨电子能量损失谱，我们在实验上测量了硅中EUV表面和体等离子体激元的光子能带结构。我们的实验观察验证了宏观电动电子能量损失理论模拟以及量子密度泛函理论计算。作为利用这些EUV等离子体应用的一个例子，我们提出了一个可调谐的和宽带无阈值切伦科夫辐射源的EUV使用硅等离子体超材料。我们的工作可以为EUV等离子体领域铺平道路。(c)根据OSA开放获取出版协议的条款，2018年美国光学学会
Silicon is widely used as the material of choice for semiconductor and insulator applications in nanoelectronics, micro-electro-mechanical systems, solar cells, and on-chip photonics. In stark contrast, in this paper, we explore silicon's metallic properties and show that it can support propagating surface plasmons, collective charge oscillations, in the extreme ultraviolet (EUV) energy regime not possible with other plasmonic materials such as aluminum, silver, or gold. This is fundamentally different from conventional approaches, where doping semiconductors is considered necessary to observe plasmonic behavior. We experimentally map the photonic band structure of EUV surface and bulk plasmons in silicon using momentum-resolved electron energy loss spectroscopy. Our experimental observations are validated by macroscopic electrodynamic electron energy loss theory simulations as well as quantum density functional theory calculations. As an example of exploiting these EUV plasmons for applications, we propose a tunable and broadband thresholdless Cherenkov radiation source in the EUV using silicon plasmonic metamaterials. Our work can pave the way for the field of EUV plasmonics. (c) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement