The dV/dt capability of MOS-gated thyristors
The dV/dt capability of MOS-gated thyristors
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DOI：
10.1109/63.704134
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发表时间：
1998-07
影响因子：
6.7
通讯作者：
P. Venkataraghavan;B. Baliga
中科院分区：
文献类型：
--
作者：
P. Venkataraghavan;B. Baliga
在本文中，详细的研究的dV/dt能力的MOS门控晶闸管进行。结果表明，除了常规的dV/dt诱导导通模式（称为本征模式）外，还存在另一种独特的dV/dt诱导导通模式，即MOS门控晶闸管结构所特有的非本征dV/dt模式。有效的dV/dt能力由两种模式决定，并因外部栅极-阴极电阻和寄生栅极-阳极电容的存在而降低。实验证明了这两种dV/dt诱导开启模式的存在，并研究了器件参数对dV/dt能力的影响。
In this paper, a detailed study of the dV/dt capability of MOS-gated thyristors is performed. It is shown that in addition to the conventional mode of dV/dt-induced turn-on in thyristors, termed the intrinsic mode, there exists another distinct mode of dV/dt-induced turn-on, peculiar to the MOS-gated thyristor structure, which the authors term the extrinsic dV/dt mode. The effective dV/dt capability is determined by both modes and is degraded by the presence of an external gate-cathode resistance and parasitic gate-anode capacitance. The existence of these two modes of dV/dt-induced turn-on is demonstrated experimentally, and the effect of device parameters on the dV/dt capability is studied.