Identification of copper-copper and copper-hydrogen complexes in silicon
Identification of copper-copper and copper-hydrogen complexes in silicon
复制标题
硅中铜-铜和铜-氢配合物的鉴定
DOI：
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发表时间：
2013
期刊：
影响因子：
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通讯作者：
J. Weber
中科院分区：
文献类型：
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作者：
N. Yarykin;J. Weber
本研究使用深能级瞬态光谱 (DLTS) 技术研究了硅中由于替代铜杂质 (Cus) 与室温下可移动的间隙铜 (Cui) 或氢 (H) 原子之间相互作用而形成的中心。结果表明，众所周知的光致发光中心包含四个铜原子，是由 Cus 通过随后添加 Cui 形成的。两种中间配合物（Cus-Cui 和 Cus-2Cui）均通过带隙下半部分的深层能级进行识别。研究发现Cus原子与1个、2个和3个氢原子形成配合物，其中Cus-H和Cus-2H具有电活性。值得注意的是，氢或铜的添加对 Cu 的深层结构具有类似的影响。
The centers formed in silicon as a result of interaction between the substitutional copper impurity (Cus) and interstitial copper (Cui) or hydrogen (H) atoms, which are mobile at room temperature, are investigated in this study using the deep-level transient spectroscopy (DLTS) technique. It is shown that a well-known photoluminescence center, which includes four copper atoms, is formed from Cus via the subsequent addition of Cui. Both intermediate complexes (Cus-Cui and Cus-2Cui) are identified by their deep levels in the lower half of the band gap. It is found that Cus atoms form complexes with one, two, and three hydrogen atoms, with Cus-H and Cus-2H being electrically active. It is noted that the addition of either hydrogen or copper has a similar effect on the deep-level structure of Cus.