Relaxed Si0.7Ge0.3 buffer layers for high‐mobility devices
Relaxed Si0.7Ge0.3 buffer layers for high‐mobility devices
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用于高迁移率器件的松弛 Si0.7Ge0.3 缓冲层
DOI：
10.1063/1.114349
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发表时间：
1995
影响因子：
4
通讯作者：
F. Legoues
中科院分区：
文献类型：
--
作者：
P. Mooney;J. Jordan;K. Ismail;J. Chu;R. Feenstra;F. Legoues
使用高分辨率X射线衍射确定了生产用于高电子和空穴迁移率器件的弛豫、热稳定的Si0.7Ge0.3缓冲层结构所需的最小外延层厚度。一个1.4 μm厚的层，阶梯渐变到x=0.35，是足够厚的，使得在其上生长的均匀组成的Si0.33Ge0.67层中的残余应变基本上与该层的厚度或生长温度无关。这种结构在750 °C退火时是稳定的。
The minimum epitaxial layer thickness required to produce relaxed, thermally stable, Si0.7Ge0.3 buffer layer structures for high electron‐ and hole‐mobility devices has been determined, using high resolution x‐ray diffraction. A 1.4‐μm‐thick layer, step graded to x=0.35, is sufficiently thick so that the residual strain in a uniform composition Si0.33Ge0.67 layer grown on top of it is essentially independent of thickness or growth temperature of the layer. Such structures are stable when annealed at 750 °C.