Low leakage current optically gated silicon field emitter arrays
Low leakage current optically gated silicon field emitter arrays
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DOI：
10.1116/1.1539060
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发表时间：
2003-01-01
影响因子：
1.4
通讯作者：
Heritage, JP
中科院分区：
文献类型：
--
作者：
Liu, KX;Heritage, JP
采用基于干法刻蚀的技术制作了具有火山形状的栅控硅发射体(50×50发射体，间距为20微米)。湿法氧化和低压化学气相沉积形成的绝缘氧化层厚度约为1微米，并沉积了作为栅电极的铬/金薄膜。栅极硅场发射阵列的量子效率和光增强场发射的动态范围随着栅极电压的增加而提高，但代价是暗电流(无光激发电流)增大。对于830 nm的光激发，130V时的效率接近29%，80V时光电流与暗电流的比值达到峰值5.5。在1064 nm处用类似于10 ns脉冲的光激励，随着栅极偏压的增加，阳极电流脉冲变短，与由于耗尽层厚度的增加而收集的漂移电子的增加一致：此外，阳极电流与栅极电流的比率在30V时达到了820的高值。
Gated silicon emitters (50 x 50 emitters at 20 mum spacing) having a "volcano" shape were fabricated by a dry etching-based technique. The insulating oxide layers formed by wet oxidation and low pressure chemical vapor deposition were similar to1 mum thick, and the Cr/Au film was deposited to function as the gate electrode. Quantum efficiency and dynamic range of photoenhanced field emission from gated silicon field emitter arrays improve at, the expense of higher dark current (current with no photoexcitation) as the gate voltage is increased. For 830 nm photoexcitation, efficiency approached 29% at 130 V, and ratio of photocurrent to dark current peaked at 5.5 at 80 V. Measured saturation behavior was attributed to screening of the applied field by photogenerated electrons. Optical excitation with similar to10 ns pulses at 1064 nm revealed shorter anode current pulses at increasing gate bias consistent with an increase in collected drift electrons due to an increase in depletion layer thickness: Also, the ratio of anode, cur-rent to, gate current reached a high of 820 at 30 V. (C) 2003 American Vacuum Society.