Controlling microstructure and film growth of relaxor-ferroelectric thin films for high break-down strength and energy-storage performance
Controlling microstructure and film growth of relaxor-ferroelectric thin films for high break-down strength and energy-storage performance
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DOI:
10.1016/j.jeurceramsoc.2017.08.027
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发表时间:
2018
影响因子:
5.7
通讯作者:
M. Nguyen;C. T. Nguyen;H. N. Vu;G. Rijnders
中科院分区:
文献类型:
--
作者:
M. Nguyen;C. T. Nguyen;H. N. Vu;G. Rijnders
The relaxor ferroelectric Pb0.9La0.1(Zr0.52Ti0.48)O3(PLZT) thin films were deposited using pulsed laser deposition, and their microstructures, break-down field strengths and energy storage performances were investigated as a function of the buffer layer and electrode. A large recoverable energy-storage density (Ureco) of 23.2 J/cm3and high energy-storage efficiency (η) of 91.6% obtained in the epitaxial PLZT film grown on SrRuO3/SrTiO3/Si are much higher than those in the textured PLZT film (Ureco= 21.9 J/cm3,η= 87.8%) on SrRuO3/Ca2Nb3O10-nanosheet/Si and the polycrystalline PLZT film (Ureco= 17.6 J/cm3,η= 82.6%) on Pt/Ti/SiO2/Si, under the same condition of 1500 kV/cm and 1 kHz, due to the slim polarization loop and significant antiferroelectric-like behavior. Owing to the high break-down strength (BDS) of 2500 kV/cm, a giantUrecovalue of 40.2 J/cm3was obtained for the epitaxial PLZT film, in whichUrecovalues of 28.4 J/cm3(at BDS of 2000 kV/cm) and 20.2 J/cm3(at BDS of 1700 kV/cm), respectively, were obtained in the textured and polycrystalline PLZT films. The excellent fatigue-free properties and high thermal stability were also observed in these films.