Improved Growth Behavior of Atomic-Layer-Deposited High-k Dielectrics on Multilayer MoS2 by Oxygen Plasma Pretreatment
Improved Growth Behavior of Atomic-Layer-Deposited High-k Dielectrics on Multilayer MoS2 by Oxygen Plasma Pretreatment
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DOI：
10.1021/am303261c
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发表时间：
2013-06-12
影响因子：
9.5
通讯作者：
Kim, Hyoungsub
中科院分区：
文献类型：
--
作者：
Yang, Jaehyun;Kim, Sunkook;Kim, Hyoungsub
我们报道了氧等离子体处理对二维MoS_2多层晶体后续生长的影响，这两种薄膜是分别以三甲基铝和四(乙基甲氨基)Hf为前驱体，在水氧化剂中进行原子层沉积(ALD)而成的。由于在MoS_2表面形成了一层超薄的Mo-O_2氧化层，即使在较高的ALD温度下，Al_2O_3和HfO_2薄膜的表面覆盖率也比原始的MoS_2膜显著提高。这些结果表明，氧等离子体处理对MoS_2的表面改性可以对随后的高k薄膜的沉积产生重要影响，这对它们在薄膜晶体管中的集成具有重要意义。
We report on the effect of oxygen plasma treatment of two-dimensional multilayer MoS2 crystals on the subsequent growth of Al2O3 and HfO2 films, which were formed by atomic layer deposition (ALD) using trimethylaluminum and tetrakis-(ethylmethylamino)hafnium metal precursors, respectively, with water oxidant. Due to the formation of an ultrathin Mo-oxide layer on the MoS2 surface, the surface coverage of Al2O3 and HfO2 films was significantly improved compared to those on pristine MoS2, even at a high ALD temperature. These results indicate that the surface modification of MoS2 by oxygen plasma treatment can have a major impact on the subsequent deposition of high-k thin films, with important implications on their integration in thin film transistors.