Impact ionization rates for electrons and holes in Al0.48In0.52As
Impact ionization rates for electrons and holes in Al0.48In0.52As
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Al0.48In0.52As 中电子和空穴的碰撞电离率
DOI：
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发表时间：
1984
期刊：
影响因子：
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通讯作者：
P. Foy
中科院分区：
文献类型：
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作者：
F. Capasso;K. Mohammed;K. Alavi;A. Cho;P. Foy
首次测量了 Al0.48In0.52As 中电子和空穴的碰撞电离率。 pin 雪崩光电二极管中的光电倍增测量在电场范围 3.3×105 V/cm≤F≤4.3×105 V/cm 内得出 α/β≊2.5–3.0。因此，这种材料可用于实现潜在的高性能、长波长雪崩光电二极管，具有独立的吸收和倍增区域以及高低电场分布（HI-LO SAM APD）。
The first measurement of the impact ionization rates for electrons and holes in Al0.48In0.52As is reported. Photomultiplication measurements in pin avalanche photodiodes give α/β≊2.5–3.0 in the electric field range 3.3×105 V/cm≤F≤4.3×105 V/cm. This material can therefore be used to implement a potentially high‐performance, long‐wavelength avalanche photodiode, with separate absorption and multiplication regions and a high‐low electric field profile (HI‐LO SAM APD).