Muon implantation experiments in films: Obtaining depth-resolved information.
Muon implantation experiments in films: Obtaining depth-resolved information.
复制标题
DOI：
10.1063/1.5126529
复制
发表时间：
2020-02
期刊：
影响因子：
--
通讯作者：
A. F. A. Simões-A.-F.-A.-Simões-2053970349;H. Alberto;R. Vilão;J. Gil;José M. V. Cunha;M. Curado;P. Salomé;T. Prokscha;Andreas Suter;Zaher Salman
中科院分区：
文献类型：
--
作者：
A. F. A. Simões-A.-F.-A.-Simões-2053970349;H. Alberto;R. Vilão;J. Gil;José M. V. Cunha;M. Curado;P. Salomé;T. Prokscha;Andreas Suter;Zaher Salman
低能量（1- 30kev）的注入正介子是研究薄膜和多层结构中非常有用的局部探针。平均介子停止深度，通常在几十纳米量级，是介子注入能量和材料密度的函数，但停止范围扩展在一个很宽的区域，也是在几十纳米量级。因此，为了提取实验参数的深度依赖关系，需要适当的仿真程序。本文提出了一种从低能介子自旋光谱实验参数的注入能量依赖中提取深度分辨信息的方法。该方法和相应的结果以半导体薄膜Cu(In,Ga)Se2为例，该薄膜覆盖了一层薄薄的Al2O3，但可以应用于任何用低能μ子研究的异质结构。结果表明，如果实验数据中存在效应，该方法是识别其位置和深度程度的重要工具。
Implanted positive muons with low energies (in the range 1-30 keV) are extremely useful local probes in the study of thin films and multi-layer structures. The average muon stopping depth, typically in the order of tens of nanometers, is a function of the muon implantation energy and of the density of the material, but the stopping range extends over a broad region, which is also in the order of tens of nanometers. Therefore, an adequate simulation procedure is required in order to extract the depth dependence of the experimental parameters. Here, we present a method to extract depth-resolved information from the implantation energy dependence of the experimental parameters in a low-energy muon spin spectroscopy experiment. The method and corresponding results are exemplified for a semiconductor film, Cu(In,Ga)Se2, covered with a thin layer of Al2O3, but can be applied to any heterostructure studied with low-energy muons. It is shown that if an effect is present in the experimental data, this method is an important tool to identify its location and depth extent.