Channel length dependence of the formation of quantum dots in GaN/AlGaN FETs
Channel length dependence of the formation of quantum dots in GaN/AlGaN FETs
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GaN/AlGaN FET 中量子点形成的沟道长度依赖性
DOI：
10.35848/1882-0786/ace415
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发表时间：
2023
影响因子：
2.3
通讯作者：
T. Otsuka
中科院分区：
文献类型：
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作者：
Kazuma Matsumura;T. Abe;Takahito Kitada;Takeshi Kumasaka;Norikazu Ito;Taketoshi Tanaka;K. Nakahara;T. Otsuka
在简单的GaN/AlGaN FET中，通过杂质和缺陷诱导的无序电势可以形成量子点。在这里，我们研究了量子点形成对通道长度的依赖关系。我们观察到随着FET沟道长度的减小，形成的量子点的数量也减少了。在栅长为0.05μm的情况下形成了几个量子点，并计算了量子点参数和无序势。我们还研究了热循环和光照的影响，揭示了无序势的变化。
Quantum dots can be formed in simple GaN/AlGaN FETs by disordered potential induced by impurities and defects. Here, we investigate the channel length dependence of the formation of quantum dots. We observe a decrease in the number of formed quantum dots with a decrease in the FET channel length. A few quantum dots are formed in the case with a gate length of 0.05 μm and we evaluate the dot parameters and the disordered potential. We also investigate the effects of a thermal cycle and illumination of light and reveal the change of the disordered potential.