Over 1.0 kV GaN p–n junction diodes on free‐standing GaN substrates
Over 1.0 kV GaN p–n junction diodes on free‐standing GaN substrates
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DOI：
10.1002/pssa.201000976
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发表时间：
2011-07
期刊：
影响因子：
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通讯作者：
K. Nomoto;Y. Hatakeyama;H. Katayose;N. Kaneda;T. Mishima;Tohru Nakamura
中科院分区：
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作者：
K. Nomoto;Y. Hatakeyama;H. Katayose;N. Kaneda;T. Mishima;Tohru Nakamura
本报告描述了GaN p-n结二极管在具有低位错密度的独立GaN衬底上的制造和特性。我们展示了具有独特场板（FP）结构的GaN p-n结二极管。由于FP结构和低位错密度，击穿电压VB进一步提高。直径为60 µ m的FP结构二极管的击穿电压超过− 1000 V，漏电流低于10 − 9 A，直到达到击穿电压。即使在采用FP的较大二极管（直径为100和200 µ m）中，击穿电压也超过− 800 V。然而，由于溅射等离子体过程的损坏，导通电阻罗恩很高。由于使用低损伤钝化膜，比导通电阻进一步提高。因此，获得了1.2 m Ω·cm 2的比导通电阻。
This report describes the fabrication and characteristics of GaN p–n junction diodes on free‐standing GaN substrates with low dislocation density. We have demonstrated GaN p–n junction diodes with a unique field‐plate (FP) structure. The breakdown voltage VB is further improved due to the FP structure and the low dislocation density. The breakdown voltage of a diode of 60 µm in diameter with the FP structure is over −1000 V, and the leakage current is below 10−9 A until reaching the breakdown voltage. Even in larger diodes (100 and 200 µm in diameter) with FP, the breakdown voltage is over −800 V. However, the specific on‐resistance Ron is high due to damage by the plasma process of sputtering. The specific on‐resistance is further improved due to using a low damage passivation film. As a result, a specific on‐resistance of 1.2 mΩ · cm2 is obtained.