Properties of Heterojunction of Si/Poly(3-methylthiophene) as a Function of Polymerization Condition
Properties of Heterojunction of Si/Poly(3-methylthiophene) as a Function of Polymerization Condition
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Si/聚(3-甲基噻吩)异质结的性能随聚合条件的变化
DOI：
10.1143/jjap.32.189
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发表时间：
1993
影响因子：
1.5
通讯作者：
Katsuyoshi Hoshino Katsuyoshi Hoshino
中科院分区：
文献类型：
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作者：
H. Kokado;F. Hosokawa;Katsuyoshi Hoshino Katsuyoshi Hoshino
详细分析了沉积在n-Si衬底上的聚（3-甲基噻吩）（P3MeT）薄膜。为了进行结分析，研究了薄膜生长过程中的电位测量、电流-电压测量、电性能退化、傅里叶变换红外测量和扫描电子显微镜观察。获得了对结的新见解。与未喷砂的n-Si衬底相比，喷砂n-Si衬底的整流性能得到了极大的改善。基于这些结果，结的形成被描述为n-Si表面羟基与聚合物膜之间共价键形成的演化。结果得到了喷砂n-Si表面FT-IR测量结果的支持。采用共价键破坏模型描述P3MeT/喷砂n-Si异质结的降解行为。
A detailed analysis of poly(3-methylthiophene) (P3MeT) films deposited on a n-Si substrate is presented. In order to perform junction analysis, potentiometric measurements during the growth of the film, current-voltage measurements, degradation of electrical properties, FT-IR (Fourier transform infrared) measurements, and SEM (scanning electron microscope) observations are studied. New insights into the junction are obtained. The rectifying behavior is greatly improved by employing sandblasted n-Si as a substrate, compared with a nonsand-blasted n-Si substrate. Based on these results, junction formation is described as the evolution of covalent bond formation between hydroxy groups on the n-Si surface and a polymer film. The results are supported by FT-IR measurements of the sandblasted n-Si surface. A covalent bond destruction model is used to describe degradation behavior of the P3MeT/sandblasted n-Si heterojunction.
DOI：
--
发表时间：
1986
期刊：
--
影响因子：
--
作者：
T. Skotheim;R. Elsenbaumer;J. Reynolds
通讯作者：
T. Skotheim;R. Elsenbaumer;J. Reynolds