Single Event Effects in Power MOSFETs and SRAMs Due to 3 MeV, 14 MeV and Fission Neutrons
Single Event Effects in Power MOSFETs and SRAMs Due to 3 MeV, 14 MeV and Fission Neutrons
复制标题
3 MeV、14 MeV 和裂变中子对功率 MOSFET 和 SRAM 的单粒子效应
DOI：
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发表时间：
2011
影响因子：
1.8
通讯作者：
P. Truscott
中科院分区：
文献类型：
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作者：
A. Hands;P. Morris;C. Dyer;K. Ryden;P. Truscott
各种SRAM和MOSFET器件在聚变设施中暴露于3 MeV和14 MeV中子，并暴露于具有california-252源的裂变中子谱。在所有三种环境中的几种MOSFET中观察到单粒子烧毁（SEB），这是第一次在中子能量低于10 MeV时观察到这种现象。除了在SRAM中观察到单粒子翻转（SEU）和单粒子闭锁（SEL）之外，两个器件还经历了显著的多单元翻转（MCU）效应，这主导了翻转率。这些现象的物理机制和各种辐射环境的后果进行了讨论。
Various SRAM and MOSFET devices were exposed to 3 MeV and 14 MeV neutrons at a fusion facility and to a fission neutron spectrum with a californium-252 source. Single event burnout (SEB) was observed in several of the MOSFETs in all three environments-the first time this phenomenon has been observed at neutron energies below 10 MeV. In addition to observing single event upsets (SEU) and single event latchup (SEL) in the SRAMs, two devices experienced significant multiple cell upset (MCU) effects which dominated the upset rate. The physical mechanisms underlying these phenomena and the consequences for various radiation environments are discussed.