Development of a silicon bulk radiation damage model for Sentaurus TCAD

Development of a silicon bulk radiation damage model for Sentaurus TCAD
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DOI：
10.1016/j.nima.2017.08.042
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发表时间：
2017-12-01
期刊：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
影响因子：
1.4
通讯作者：
Williams, M.
Williams, M.
中科院分区：
物理与天体物理3区
文献类型：
--
作者：
Folkestad, A.;Akiba, K.;Williams, M.

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本文提出了一个新的体辐射损伤模型的p型硅用于Synopsys Sentaurus TCAD。该模型被证明提供协议之间的实验和模拟的泄漏电流和电荷收集效率的电压依赖性，通量高达8 × 10（15）1 MeV n（eq）/cm（2）。(C)2017 CERN为作者的利益。由爱思唯尔公司出版
This article presents a new bulk radiation damage model for p-type silicon for use in Synopsys Sentaurus TCAD. The model is shown to provide agreement between experiment and simulation for the voltage dependence of the leakage current and the charge collection efficiency, for fluences up to 8 x 10(15) 1 MeV n(eq)/cm(2). (C) 2017 CERN for the benefit of the Authors. Published by Elsevier B.V.