1/f noise in n-p-n GaAs/AlGaAs heterojunction bipolar transistors:iImpact of intrinsic transistor and parasitic series resistances
1/f noise in n-p-n GaAs/AlGaAs heterojunction bipolar transistors:iImpact of intrinsic transistor and parasitic series resistances
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n-p-n GaAs/AlGaAs 异质结双极晶体管中的 1/f 噪声：本征晶体管和寄生串联电阻的影响
DOI：
10.1109/16.214742
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发表时间：
1993
影响因子：
3.1
通讯作者：
A. Holden
中科院分区：
文献类型：
--
作者：
T. Kleinpenning;A. Holden
在室温下，对n-p-nGaAs/AlGaAs异质结双极晶体管进行了1/f噪声实验。实验数据进行了讨论的帮助下，新的表达式的1/f噪声在双极晶体管的内部寄生串联电阻的影响已被考虑在内。在低正向电流下，1/f噪声由基极和集电极电流的自发波动决定。在固定偏置下，集电极电流噪声超过基极电流噪声。在较高正向电流下，寄生串联电阻及其1/f噪声变得很重要。从文献的实验结果进行了比较的结果。>
1/f noise experiments were performed for n-p-n GaAs/AlGaAs HBTs as a function of forward bias at room temperature. The experimental data are discussed with the help of new expressions for the 1/f noise in bipolar transistors where the influence of internal parasitic series resistances has been taken into account. At low forward currents the 1/f noise is determined by spontaneous fluctuations in the base and collector currents. At fixed bias, the collector current noise exceeds the base current noise. At higher forward currents the parasitic series resistances and their 1/f noise become important. Experimental results from the literature are compared with the results. >