Deuterium retention in self-damaged tungsten
Deuterium retention in self-damaged tungsten
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DOI：
10.1016/j.jnucmat.2009.10.046
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发表时间：
2009-12
影响因子：
3.1
通讯作者：
B. Tyburska;V. Alimov;O. Ogorodnikova;Klaus Schmid;K. Ertl
中科院分区：
文献类型：
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作者：
B. Tyburska;V. Alimov;O. Ogorodnikova;Klaus Schmid;K. Ertl
用注量为1×10~(26)D/m~2的低能氘离子在不同温度下辐照多晶钨后，研究了未损伤和5.5 MeV W~(2+)离子损伤到0.04、0.4和1.2 dpa，以及随后在1200K下退火2小时前后，多晶钨的表面和亚表面的形貌和氚的保留情况。采用扫描电子显微镜和聚焦离子束表面切割相结合的方法对涂层的形貌变化进行了研究。用热脱附谱研究了不同的氢键合态，用离子束核反应分析测量了注入D的深度分布。研究了D保持率与损伤程度和注入剂量的关系，结果表明，与注入剂量无关，D保持率在0.4dpa内达到饱和。此外，观察到自注入引入了高温陷阱，这些陷阱可以通过1200K的热处理几乎完全消除。
Surface and sub-surface morphology and deuterium retention in polycrystalline tungsten, undamaged and pre-damaged with 5.5MeV W2+ions to damage levels of 0.04, 0.4, and 1.2dpa, with and without subsequent annealing at 1200K for 2h, have been examined after irradiation with low-energy deuterium ions up to a fluence of 1×1026D/m2at various temperatures. The morphology changes were investigated by scanning electron microscopy in combination with focused ion beam surface cutting. The different hydrogen binding states were investigated by thermal desorption spectroscopy, and the depth profile of the implanted D was measured by ion beam nuclear reaction analysis. The dependence of the D retention on the damage level and the implanted fluence was studied, and the results show saturation for 0.4dpa independent of the deuterium implantation fluence. Additionally, it was observed that self-implantation introduces high temperature traps which can almost completely be removed by annealing at 1200K.